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| HiPerFASTTM IGBT Preliminary data sheet IXGH 28N90B VCES IXGT 28N90B IC25 VCE(SAT) tfi(typ) = 900 V = 51 A = 2.7 V = 130 ns Symbol VCES VCGR VGES VGEM I C25 I C110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25C Maximum Ratings 900 900 20 30 51 28 120 ICM = 56 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W C C C C TO-247 AD (IXGH) C (TAB) G C E TO-268 (D3) (IXGT) G E (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-247 SMD 1.13/10Nm/lb.in. 6 4 g g Features l International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD l High current handling capability l Latest generation HDMOSTM process l MOS Gate turn-on - drive simplicity Applications l AC motor speed control l DC servo and robot drives l DC choppers l Uninterruptible power supplies (UPS) l Switched-mode and resonant-mode power supplies Advantages l Space savings (two devices in one package) l High power density l Suitable for surface mounting l Switching speed for high frequency applications l Easy to mount with 1 screw,TO-247 (isolated mounting screw hole) Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 900 2.5 TJ = 25C TJ = 150C 5 500 5 100 2.2 2.7 V V mA mA nA V BVCES VGE(th) I CES I GES VCE(sat) IC IC = 250 mA, VGE = 0 V = 250 mA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC110, VGE = 15 V (c) 2000 IXYS All rights reserved 98634B (10/00) IXGH 28N90B IXGT 28N90B Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 32 3200 VCE = 25 V, VGE = 0 V, f = 1 MHz 160 32 100 I C = IC110, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C I C = IC110, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125C I C = IC110, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 18 40 30 30 100 130 1.2 30 35 0.3 280 190 2.5 170 220 150 28 70 S AEP TO-247 AD Outline gfs Cies Coes Cres Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK IC = IC110; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % pF pF pF nC nC nC ns ns ns ns e Dim. 2 mJ ns ns mJ ns ns mJ 0.62 K/W Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 AEP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline TO-247 0.25 K/W Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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